S. Banerjee et An. Das, ISOTOPIC MASS AND PRESSURE-DEPENDENT CHANGES FOR EXTENDED S-WAVE SUPERCONDUCTORS, Journal of physics. Condensed matter, 8(50), 1996, pp. 11131-11139
We consider a tight-binding model comprising a hopping and an attracti
ve interaction term to obtain superconductivity. Exact expressions for
the isotope-shift exponent (alpha) and the pressure coefficient of tr
ansition temperature (gamma(P)) are derived invoking the isotopic mass
and pressure dependence of both the hopping and attractive interactio
n terms. The variations of alpha and gamma(P) are studied as a functio
n of the chemical potential and the transition temperature. With prope
r choice of parameters we obtain large positive values of alpha for lo
w-T-c samples and a minimum in alpha near optimum doping. It is found
that yp is large and positive for low-T-c underdoped systems and small
near optimum doping. These results qualitatively agree with the exper
imental results of hole-doped high-T-c oxides. The behaviour of gamma(
P) for electron-doped oxide systems can also be explained from the mod
el.