CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/

An electron beam induced current in metal-oxide-semiconductor capacito rs (MOS/EBIC) investigation of the defects in silicon on insulator (SO I) wafers and oxidation induced stacking faults in CZ-S1 is presented. Some advantages of the method over conventional Schottky diode EBIC h ave been demonstrated. MOS/EBIC is shown to delineate defects which ar e shallower than the space charge region of Schottky diodes and not de tectable using conventional EBIC. In addition, the MOS/EBIC technique is capable of separating bulk, interfacial and oxide defects in the MO S structures. Using the MOS/EBIC technique, electrically active defect s below the buried oxide in SOI wafers were observed for the first tim e. The local properties of thermal oxides grown in different oxidation conditions were studied by MOS/EBIC. It was found that during reoxida tion induced stacking faults produce defects in growing oxide which ca use enhanced oxide current sites.