CATHODOLUMINESCENCE MICROSCOPY OF DOPED GASB CRYSTALS

We present the homogeneity and luminescence properties of bulk GaSb ob tained by the cathodoluminescence (CL) technique in the scanning elect ron microscope. The samples used in this study are as-grown undoped an d impurity diffused (tellurium) and doped (chromium) material. CL inve stigations have revealed a non uniform distribution of native defects in GaSb wafers. Post growth annealing in vacuum, gallium or antimony a tmospheres causes an increase in homogeneity in CL images. Te diffusio n and Cr doping provides new information about defects in GaSb. CL ima ges and CL spectra recorded in these samples support that the type of defects formed is a function of diffusion time and impurity concentrat ion.