E-BEAM TOMOGRAPHY OF PLANAR SEMICONDUCTOR STRUCTURES

The 'apparatus' approach to the realization of e-beam layer-by-layer t omography in which the reconstruction of internal structure and physic al properties depth distribution is achieved by means of specially des igned set-up has been discussed. It is shown that the backscattering e lectron mode with a variation primary electron energy or using energy dispersive detection, and modulated electron beam induced curl ent and cathodoluminescence modes can be used as the 'apparatus' tomography m ethods for nondestructive characterization of multilayer planar struct ures. The depth resolution of these methods achieve 10 nm.