Me. Pistol et al., STM-BASED LUMINESCENCE SPECTROSCOPY ON SINGLE QUANTUM DOTS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 82-87
The ability to fabricate quantum dots using the Stranski-Krastanow gro
wth technique has improved dramatically during the last number of year
s. Due to the large number of dots formed (typically 10(8)-10(9) cm(-3
)) the emission linewidth is inhomogeneously broadened. We have grown
quantum dots of InP in between barriers of GaInP, as well as on top of
GaInP, having a low density of dots in order to perform single-dot sp
ectroscopy. These dots have been studied by photoluminescence and scan
ning tunneling luminescence. We find in photoluminescence that the ful
ly formed dots have well-defined, sharp (0.04-1 meV) emission lines, w
hich are very similar from dot to dot. In scanning tunneling luminesce
nce we find that we can very locally excite only a few partially forme
d dots which have sharp emission lines (0.1 meV at 77 K). These emissi
on lines display a quantum confined Stark effect when the applied tip
to sample bias is varied. We can carefully determine the onset of exci
ton formation as a function of applied bias. The applied bias which is
necessary for impact ionization is found to agree well with simple th
eory.