T. Sekiguchi et al., CATHODOLUMINESCENCE AND EBIC STUDY ON MISFIT DISLOCATIONS IN SIGE SI HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 141-145
Optical and electrical activities of misfit dislocations in SiGe/Si fi
lms were studied by means of cathodoluminescence (CL) and electron bea
m induced current (EBIC) technique. The dominant type of dislocations
were densely spaced dislocations and isolated dislocations running alo
ng the two [110] directions identified by X-ray topographs. Strong D2,
D3 and D4 luminescence was observed from the densely spaced dislocati
ons, while weak D1 luminescence was observed at some regions where dis
locations intersect each other. The intensity distribution of D2 lumin
escence is nonuniform along misfit dislocations compared with that of
D3. No D-line luminescence was observed from isolated dislocations. Bo
th densely spaced dislocations and isolated dislocations are EBIC acti
ve below 200 K, indicating that they are free from serious metallic co
ntamination. The ratio of radiative recombination to total recombinati
on at a region of densely spaced dislocations is less than 1%, which s
uggests that the energy state of dislocation spreads in the momentum s
pace.