ENERGY-LOSS DEPENDENCE OF INELASTIC INTERACTIONS BETWEEN HIGH-ENERGY ELECTRONS AND SEMICONDUCTORS - A MODEL TO DETERMINE THE SPATIAL-DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATION

A scattering model to evaluate the extent of generated electron-hole p airs (e-h) in semiconductors during electron beam excitation in the 5- 40 keV beam energy range is presented. From a modified Kanaya and Okay ama model, the range R and energy-loss equation dE/dS dependence on th e inelastic and elastic scattering cross-section proportion are analyt ically deduced. The presented model allows to modulate the proportion of inelastic-elastic scattering cross-section versus the energy of the incident electrons as occurs for each different interaction. Into thi s formalism is introduced the rate of KCL ionization events at differe nt incident electron energy. This model is then used in Monte Carlo ca lculations to deduce the e-h generation function g(x, y, z) at differe nt electron beam energy (E(b)) levels. As a result, both depth and lat eral dependences of e-h generation are found to fit successfully the e xperimental distributions of Bonard et al.