STUDY OF COPPER AGGREGATIONS AT DISLOCATIONS IN GAAS

Authors
LEIPNER HS SCHOLZ R SYROWATKA F UNIEWSKI H SCHREIBER J
Citation
Hs. Leipner et al., STUDY OF COPPER AGGREGATIONS AT DISLOCATIONS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 185-188
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
42
Issue
1-3
Year of publication
1996
Pages
185 - 188
Database
ISI
SICI code
0921-5107(1996)42:1-3<185:SOCAAD>2.0.ZU;2-F
Abstract
In copper diffused gallium arsenide cathodoluminescence investigations were combined with analytical and transmission electron microscopy in order to interpret the occurrence of bright or dark dislocation contr asts. Various structures of Cu agglomerations were found in dependence on diffusion temperature and cooling rate. Bright dislocation contras ts are related to the enrichment of solute Cu-Ga accepters, whereas da rk contrasts are mainly due to non-radiative recombination of Cu-As pr ecipitates or clouds of small dislocation loops.