CHARACTERIZATION OF MQW HETEROSTRUCTURES WITH ACOUSTOOPTICAL CATHODOLUMINESCENCE SPECTROMETER

We report a development and application to SEM studies of semiconducto rs of a cathodoluminescence spectrometer based on acoustooptical filte rs, that has several advantages in comparison with commonly used spect rometers and can be directly placed on a SEM electron-beam column. Dig ital control and high transmission of the unit permit to measure spect ra of cathodoluminescence emission of a solid solution of A(3)B(5) sem iconductors and to study an image of the nonradiative defects in a mul ti quantum well active layer of laser heterostructures. The results ar e discussed on the point of view of initial stages of growth of an InP layer on the surface of InGaAs layer during the MOCVD epitaxial growt h of heterostructures.