INVESTIGATION OF DEEP-LEVEL DEFECTS IN SEMIINSULATING GAAS AND INP BYANALYSIS OF PHOTOINDUCED CURRENT TRANSIENTS

Authors
KAMINSKI P PAWLOWSKI M CWIRKO R PALCZEWSKA M KOZLOWSKI R
Citation
P. Kaminski et al., INVESTIGATION OF DEEP-LEVEL DEFECTS IN SEMIINSULATING GAAS AND INP BYANALYSIS OF PHOTOINDUCED CURRENT TRANSIENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 213-216
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
42
Issue
1-3
Year of publication
1996
Pages
213 - 216
Database
ISI
SICI code
0921-5107(1996)42:1-3<213:IODDIS>2.0.ZU;2-L
Abstract
A new digital approach to PICTS technique was applied to study deep le vels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.6 4-eV trap related to Fe2+/Fe3+ acceptor level as well as the 0.53-eV t rap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1 (0.58 eV), T2 (0.66 eV) and T3 (0.73 eV) assigned to the known centers EL3, HL9, and EL2, respectively, were resolved. The studies were completed by the electron spin resonance (ESR) measuremen ts.