A STUDY OF DISLOCATIONS IN GAAS-TE USING ELECTRON AND OPTICAL BEAMS

Authors
MARTIN P FRIGERI C JIMENEZ J WEYHER J
Citation
P. Martin et al., A STUDY OF DISLOCATIONS IN GAAS-TE USING ELECTRON AND OPTICAL BEAMS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 225-229
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
42
Issue
1-3
Year of publication
1996
Pages
225 - 229
Database
ISI
SICI code
0921-5107(1996)42:1-3<225:ASODIG>2.0.ZU;2-0
Abstract
Dislocation atmospheres in bulk GaAs:Te have been studied using differ ent probe beam techniques, either optical or electronic. The recombina tive atmospheres were chemically revealed by DSL and then studied by e lectron beam induced current (EBIC) and microRaman spectroscopy. Carri er depletion of local crystal misorientations were the main observatio ns. Transmission electron microscopy (TEM) allowed an identification o f the microstructure of these atmospheres. The formation of microloops appears as the mean reason for the structural changes observed. A pos sible formation mechanism is discussed.