CATHODOLUMINESCENCE STUDY OF GAN EPITAXIAL LAYERS

Authors
CREMADES A PIQUERAS J XAVIER C MONTEIRO T PEREIRA E MEYER BK HOFMANN DM FISCHER S
Citation
A. Cremades et al., CATHODOLUMINESCENCE STUDY OF GAN EPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 230-234
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
42
Issue
1-3
Year of publication
1996
Pages
230 - 234
Database
ISI
SICI code
0921-5107(1996)42:1-3<230:CSOGEL>2.0.ZU;2-H
Abstract
GaN epitaxial layers have been investigated by cathodoluminescence (CL ) in the scanning electron microscope (SEM). The most prominent featur e of the spectra is a complex band at 2.2 eV, whose evolution with tem perature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a dee p center in the emission. CL images reveal that the centers responsibl e for this emission decorate grain boundaries. Emission bands al 2.87 eV and 1.31 eV have been also detected in the films.