SEM CL STUDIES ON POLAR GLIDE DISLOCATIONS IN CDTE

Authors
UNIEWSKI H SCHREIBER J HILDEBRANDT S LEIPNER HS
Citation
H. Uniewski et al., SEM CL STUDIES ON POLAR GLIDE DISLOCATIONS IN CDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 284-288
Citations number
15
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
42
Issue
1-3
Year of publication
1996
Pages
284 - 288
Database
ISI
SICI code
0921-5107(1996)42:1-3<284:SCSOPG>2.0.ZU;2-6
Abstract
Defects in CdTe generated by micro-indentation are studied by cathodol uminescence scanning microscopy. At low temperatures (T < 100 K) a loc alized luminescence with peak energy at 1.48 eV is observed. A model f or the dislocation distribution on +/- (111), (110) and (100) surfaces is presented. By analyzing the dislocation rosettes on these surfaces the defect bound luminescence can be related to Te(g) dislocations. T he polarity of the glide dislocations is established by studying the d epth distribution of Te(g) dislocations on ((111) over bar)Te oriented samples.