M. Goldberg et al., DOSE EFFECTS OF CATHODOLUMINESCENCE IN SIO2 LAYERS ON SI, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 293-296
Cathodoluminescence (CL) of thermal SiO2 layers is performed in a digi
tal scanning electron microscope (SEM) and wavelength dispersed regist
ered by a CCD-camera. The CL-spectrum of SiO2 shows three characterist
ic bands at 650 nm (red), 460 Mn (blue) and 285 nm (UV) that all chang
e their intensity during the time of electron bombardment. This differ
ent excitation dose behaviour of the luminescence bands was investigat
ed in a wide range of current densities (10(-5)-10(-3) A cm(-2)) and t
emperatures (90-500 K). Some interpretation is made by a model of prec
ursor transformation and quenching. The UV and blue luminescence is at
tributed to twofold-coordinated silicon in SiO2. Contrary to thermal S
iO2 films TEOS-CVD SiO2 shows only the red band which is generally ass
ociated with non-bridging oxygen.