GROWTH OF GAAS CRYSTALS BY VGF AT DIFFERENT AS SOURCE TEMPERATURES

Authors
FRANK C HEIN K HANNIG C GARTNER G
Citation
C. Frank et al., GROWTH OF GAAS CRYSTALS BY VGF AT DIFFERENT AS SOURCE TEMPERATURES, Crystal research and technology, 31(6), 1996, pp. 753-761
Citations number
21
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
31
Issue
6
Year of publication
1996
Pages
753 - 761
Database
ISI
SICI code
0232-1300(1996)31:6<753:GOGCBV>2.0.ZU;2-0
Abstract
The influence of the As source temperature on the properties of undope d [100] orientated GaAs crystals during VGF crystal growth was investi gated in the range of T-As = 600 to 631 degrees C. The crystal morphol ogy has shown significant differences. A monocrystalline growth is obs erved in the range of T-As = 607 to 620 degrees C. The EPD values are in the range of 10(3) cm(-2) irrespective of the preset temperature of the As source. A decrease in the As source temperature from 620 degre es C to 607 degrees C will result in a reduced concentration of the in trinsic defect EL2 from 0.8 . 10(16) cm(-3) to 0.6 . 10(16) cm(-3).