ELECTROCHEMICAL-BEHAVIOR OF THIN ANODIC OXIDE-FILMS ON ZIRCALOY-4 - ROLE OF THE MOBILE DEFECTS

Citation
R. Salot et al., ELECTROCHEMICAL-BEHAVIOR OF THIN ANODIC OXIDE-FILMS ON ZIRCALOY-4 - ROLE OF THE MOBILE DEFECTS, Journal of the Electrochemical Society, 143(12), 1996, pp. 3902-3909
Citations number
46
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
143
Issue
12
Year of publication
1996
Pages
3902 - 3909
Database
ISI
SICI code
0013-4651(1996)143:12<3902:EOTAOO>2.0.ZU;2-X
Abstract
The first stages of the electrochemical oxidation of Zircaloy-4 are in vestigated using simple electrochemical tests and modeling the passive film modifications occurring as a result of contact with the electrol yte. Variations in electrode potential (open-circuit conditions) or cu rrent density (potentiodynamic scans) can be simply explained by a hig h field (F similar to 10(6) V/cm) assisted passive film growth. Under open-circuit conditions, this field does not vary with exposure time ( in the 2 h to 48 h range). The minimum electric field for the onset of high-field behavior is also evaluated and found smaller than the theo retical value which can be explained by a variation in the concentrati on of mobile defects throughout the film. Measurements of the electrod e potential decay after a potentiodynamic scan confirm this model, all owing interpretation of the film modification as a combination of two separate phenomena: film growth under a high electric field and point defect annihilation.