B. Garrido et al., THE ROLE OF CHEMICAL-SPECIES IN THE PASSIVATION OF [100] SILICON SURFACES BY HF IN WATER-ETHANOL SOLUTIONS, Journal of the Electrochemical Society, 143(12), 1996, pp. 4059-4066
The role played by the chemical species present in HF/water-ethanol so
lutions as last cleaning steps of the [100] silicon surface has been a
nalyzed. The concentrations of these species as a function of the etha
nol content have been calculated from measured equilibrium constants f
or the dissociation and homoconjugation reactions of HF in water-ethan
ol solutions. The correlation of these data with the measured etching
rates of silicon oxide in these solutions suggests that etching in KF/
pure ethanol is controlled almost completely by the ion HF2-. The cont
ribution of the H2F2 dimers to the etching process diminishes as ethan
ol content increases. This indicates an increasing activation energy o
f the dimer etching reaction when the ethanol content is raised. This
characteristic behavior is associated with the slower and more homogen
eous etching action of HF/ethanol solutions as well as with the absenc
e of faceting and lower microroughness generation in [100] silicon Sur
faces. The effects of overetching are not significant, and moreover, t
he characteristic surfactant properties of alcohols contribute to the
effects of these cleaning solutions.