Hj. Schulze et al., HIGH-RESOLUTION MEASUREMENT OF RESISTIVITY VARIATIONS IN POWER DEVICES BY THE PHOTOSCANNING METHOD, Journal of the Electrochemical Society, 143(12), 1996, pp. 4105-4108
In order to obtain high breakdown voltages, power devices require a th
ick n-type layer with high resistivity and high carrier Lifetime. Ther
efore, contamination with shallow level impurities which change the st
arting resistivity can result in an undesireable reduction of the bloc
king voltage. To detect such resistivity variations, a photoscanning m
ethod with high spatial resolution was used.