ELECTRON-TRANSPORT IN GAAS AT LOW LATTICE TEMPERATURES

Through numerical methods, investigations have been carried out to see how the finite energy of the deformation potential and piezoelectric acoustic phonons affects the ohmic and non-ohmic mobility characterist ics of n-type GaAs taking the non-parabolicity of the conduction band into account and under the conditions that, unlike the traditional app roximations, the energy of the acoustic phonons can neither be neglect ed in comparison with the carrier energy nor the phonon population be represented by the equipartition law. The results show interesting fea tures in that they are significantly different from those that follow from the traditional approximation of negligible phonon energy and als o provide better agreement with the available experimental data. The i nadequacies of the present theory and the scope for further refinement s are discussed.