Ak. Ghorai et Dp. Bhattacharya, ELECTRON-TRANSPORT IN GAAS AT LOW LATTICE TEMPERATURES, Physica status solidi. b, Basic research, 197(1), 1996, pp. 125-136
Through numerical methods, investigations have been carried out to see
how the finite energy of the deformation potential and piezoelectric
acoustic phonons affects the ohmic and non-ohmic mobility characterist
ics of n-type GaAs taking the non-parabolicity of the conduction band
into account and under the conditions that, unlike the traditional app
roximations, the energy of the acoustic phonons can neither be neglect
ed in comparison with the carrier energy nor the phonon population be
represented by the equipartition law. The results show interesting fea
tures in that they are significantly different from those that follow
from the traditional approximation of negligible phonon energy and als
o provide better agreement with the available experimental data. The i
nadequacies of the present theory and the scope for further refinement
s are discussed.