DIELECTRIC-BREAKDOWN .1. A REVIEW OF OXIDE BREAKDOWN

Authors
VERWEIJ JF KLOOTWIJK JH
Citation
Jf. Verweij et Jh. Klootwijk, DIELECTRIC-BREAKDOWN .1. A REVIEW OF OXIDE BREAKDOWN, Microelectronics, 27(7), 1996, pp. 611-622
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
27
Issue
7
Year of publication
1996
Pages
611 - 622
Database
ISI
SICI code
0026-2692(1996)27:7<611:D.AROO>2.0.ZU;2-I
Abstract
This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by thei r application to the estimation of the oxide lifetime. The main part o f the paper is devoted to the physical background of the intrinsic bre akdown. Finally, defect-related or extrinsic breakdown is discussed. C opyright (C) 1996 Elsevier Science Ltd.