EFFECTS OF OXIDE FIELD DURING SHE INJECTION AS STUDIED BY 3 LEVEL CHARGE-PUMPING

Three level charge pumping (3LCP) is used in the evaluation of oxide f ield effects during substrate hot electron (SHE) injection in nMOSFETs . For increasing oxide field during stress, it is found that interface state generation increases in both the upper and lower parts of the b and gap. Also presented are results for the effects of SHE stress on e mission time constants and capture cross-section of the interface stat es. The results indicate that for increasing oxide fields during SHE s tress the emission time decreases and interface trap capture cross-sec tion increases in the lower band gap. In the upper band gap the situat ion is complicated by the lack of complete saturation in the measured charge pumping current; however, a similar increase in emission cross- section is found. Copyright (C) 1996 Elsevier Science Ltd.