STUDY OF OSCILLATORY REGIMES OF A PERIODICALLY EXTERNALLY PERTURBED METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

An experimental study has been carried out of oscillatory regimes in a non-autonomous RL circuit containing a MIS structure. It is found tha t the properties of the semiconductor substrate have an affect on the excitation of nonlinear oscillations in the circuit. Analysis of the r egime diagrams, phase characteristics, and pulse behavior, as recorded in the oscillograms, has made it possible to delineate the dependence of the nonlinear oscillations on the properties of the MIS structure. Nonlinear effects in the circuit occur due to charge-carrier accumula tion and recombination in the MIS structure. (C) 1996 American Institu te of Physics.