THERMOELECTRIC FIGURE OF MERIT OF HETEROVALENTLY AND ISOVALENTLY DOPED PBSE

Authors
ALEKSEEVA GT GURIEVA EA KONSTANTINOV PP PROKOFEVA LV FEDOROV MI
Citation
Gt. Alekseeva et al., THERMOELECTRIC FIGURE OF MERIT OF HETEROVALENTLY AND ISOVALENTLY DOPED PBSE, Semiconductors, 30(12), 1996, pp. 1125-1127
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
12
Year of publication
1996
Pages
1125 - 1127
Database
ISI
SICI code
1063-7826(1996)30:12<1125:TFOMOH>2.0.ZU;2-E
Abstract
We investigate the thermoelectric power coefficient, electrical conduc tivity, and thermal conductivity of PbSe doped with chlorine and sodiu m in the temperature interval 300-950 K. The values of the kinetic coe fficients and thermoelectric figure of merit are compared with analogo us data for PbTe. An improvement in the thermoelectric parameters of p -PbSe is observed at high temperatures after additional isovalent dopi ng by cadmium and manganese impurities. (C) 1996 American Institute of Physics.