IMPROVED LOCOS ISOLATION FOR THIN-FILM SOI MOSFETS

The authors propose the use of a recessed LOCOS technique instead of a standard LOCOS process to eliminate parasitic edge transistor leakage in thin-film SOI MOSFETs. This technique helps to increase the sidewa ll threshold voltage by both avoiding excess boron segregation into th e field oxide, and providing a smoother edge rounding than that obtain ed by a classical LOCOS process.