ANNEALING-INDUCED DEGRADATION OF THERMAL SIO2 - S-CENTER GENERATION

Direct electron spin resonance evidence of profound intrinsic point de fect generation in standard thermal SiO2 during postoxidation (PO) vac uum annealing is presented. The detected isotropic signal (peak-to-pea k width 4.5-5.8 G; g=2.0028 at 4.3 K) is assigned to S centers, tentat ively ascribed previously to E'-like defects (O-3 equivalent to Si Wit h one or two O replaced by Si). This process is advanced as atomic ess ence of the electrically well-known oxide degradation during PO anneal ing in inert ambient, likely effectuated by interface-initiated (volat ile) SiO interaction. Coproduction of EX and E'(delta) defects is newl y reported for thermal SiO2 as well. (C) 1996 American Institute of Ph ysics.