Room temperature distributed-feedback (DFB) laser operation is demonst
rated with emission wavelengths ranging from 389 to 399 nm. Second-ord
er DFB gratings were defined by electron beam lithography and reactive
ion etching in the top GaN barrier layer of a GaInN/GaN double hetero
structure grown by metalorganic vapor phase epitaxy. Our data allow a
precise determination of the effective refractive index n(eff)(lambda)
over the whole emission range. n(eff)(lambda) is compared with previo
usly published values for GaN and GaInN. (C) 1996 American Institute o
f Physics.