ELECTROLUMINESCENCE FROM ERBIUM AND OXYGEN COIMPLANTED GAN

Authors
TORVIK JT FEUERSTEIN RJ PANKOVE JI QIU CH NAMAVAR F
Citation
Jt. Torvik et al., ELECTROLUMINESCENCE FROM ERBIUM AND OXYGEN COIMPLANTED GAN, Applied physics letters, 69(14), 1996, pp. 2098-2100
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
14
Year of publication
1996
Pages
2098 - 2100
Database
ISI
SICI code
0003-6951(1996)69:14<2098:EFEAOC>2.0.ZU;2-8
Abstract
Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electr oluminescence at lambda=1.54 mu m was detected under reverse bias afte r a postimplant anneal at 800 degrees C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on app lied reverse drive current. (C) 1996 American Institute of Physics.