THE DOSE, ENERGY, AND TIME-DEPENDENCE OF SILICON SELF-IMPLANTATION INDUCED TRANSIENT ENHANCED DIFFUSION AT 750-DEGREES-C

The short anneal time behavior of transient enhanced diffusion of dopa nts in silicon is investigated experimentally using a buried boron mar ker layer structure and varying Si implant doses and implant energies. The diffusion behavior of the marker layer shows that the diffusivity enhancements are, to the first order, independent of the implant cond itions at short anneal times, while the overall transient motion incre ases with increasing implant conditions. The data are analyzed using a n interstitial clustering model that includes both cluster evaporation and cluster growth terms. (C) 1996 American Institute of Physics.