MOLECULAR-DYNAMICS SIMULATIONS OF SILICON-WAFER BONDING

Molecular dynamics simulations based on a modified Stillinger-Weber po tential are used to investigate the elementary steps of bonding two Si (0 0 1) wafers. The energy dissipation and thus the dynamic bonding be haviour are controlled by the transfer rates for the kinetic energy. T he applicability of the method is demonstrated by studying the interac tion of perfect wafer surfaces (UHV conditions). First calculations co vering the influence of surface steps, rotational misorientations and adsorbates are presented.