HTSC SUBSTRATE AND BUFFER LAYER COMPOUNDS, A(2)MESBO(6) WHERE A=BA,SRAND ME=SC,IN AND GA

Compounds in the series A(2)MeSbO(6) where A = Ba, Sr and Me = Sc, In and Ga have been used as substrate/buffer layers with YBa2Cu3O7-delta thin films. These materials were prepared by solid-state reaction of t he oxides and carbonates. The compounds are ordered perovskites except for Ba2InSbO6. All compounds are cubic except Sr2ScSbO6 and Sr2GaSbO6 which are pseudo-cubic, tetragonal. Dielectric constant and loss tang ent are reported for each bulk compound. Herein is described the succe ssful deposition of thin films A(2)MeSbO(6) on YBCO, A(2)MeSbO(6)/(001 ) YBCO/(100) MgO by pulsed-laser ablation.