THE BIAS-DEPENDENCE CHANGE OF BARRIER HEIGHT OF SCHOTTKY DIODES UNDERFORWARD BIAS BY INCLUDING THE SERIES RESISTANCE EFFECT

Schottky barrier height shifts depending on the interfacial layer as w ell as a change of the interface state charge with the forward bias wh ile considering the presence of bulk (semiconductor) series resistance are discussed both theoretically and experimentally. It has been conc luded that the barrier height shift or increase in Schottky diodes is mainly due to the potential change across the interfacial layer and th e occupation of the interface states as a result of the applied forwar d voltage. One assumes that the barrier height is controlled by the de nsity distribution of the interface states in equilibrium with the sem iconductor and the applied voltage. In nonideal Schottky diodes, the v alues of the voltage drops across the interfacial layer, the depletion layer and the bulk resistance are given in terms of the bias dependen t ideality factor, n, different from those in literature. These values are determined by a formula obtained for V-i and V-s by means of chan ge of the interface charge with bias.