Citation
Ky. Arutyunov et al., CURRENT-VOLTAGE CHARACTERISTICS AND MAGNETORESISTANCE PECULIARITIES IN BISMUTH MICROBRIDGES, Physica. B, Condensed matter, 218(1-4), 1996, pp. 35-38
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
09214526
Volume
218
Issue
1-4
Year of publication
1996
Pages
35 - 38
Database
ISI
SICI code
0921-4526(1996)218:1-4<35:CCAMPI>2.0.ZU;2-G
Abstract
A technology of the fabrication of bismuth microbridges with controlle
d geometry and various degrees of perfection of diffuse transport of t
he carriers is realized. Peculiarities on d(2)V/dI(2)(V)P which give i
nformation about the microcontact of the bismuth spectrum, were observ
ed at V = 4.1 mV and V = 11 mV. Some of the dV/dI(V) dependences at a
large bias voltage reveal peculiarities connected with the superconduc
tivity at T-c = 5.9 K.