PROPERTIES OF TUNGSTEN POINT CONTACTS FORMED WITH CHEMICAL-VAPOR-DEPOSITION

Authors
GRIBOV NN CARO J OOSTERLAKEN TGM RADELAAR S
Citation
Nn. Gribov et al., PROPERTIES OF TUNGSTEN POINT CONTACTS FORMED WITH CHEMICAL-VAPOR-DEPOSITION, Physica. B, Condensed matter, 218(1-4), 1996, pp. 101-104
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
218
Issue
1-4
Year of publication
1996
Pages
101 - 104
Database
ISI
SICI code
0921-4526(1996)218:1-4<101:POTPCF>2.0.ZU;2-P
Abstract
We have used chemical vapour deposition to form tungsten point contact s. From electron microscopy we find that nanoholes in membranes are fi lled from the beginning of the deposition using the CVD process for al pha-W. Fabricated devices show good point-contact spectra (alpha-W) an d interesting electrical characteristics (beta-W and amorphous W).