PROXIMITY HIGH TRANSMITTANCE MICROJUNCTIONS IN PRESENCE OF A MAGNETIC-FIELD

Citation
F. Tafuri et al., PROXIMITY HIGH TRANSMITTANCE MICROJUNCTIONS IN PRESENCE OF A MAGNETIC-FIELD, Physica. B, Condensed matter, 218(1-4), 1996, pp. 130-133
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
218
Issue
1-4
Year of publication
1996
Pages
130 - 133
Database
ISI
SICI code
0921-4526(1996)218:1-4<130:PHTMIP>2.0.ZU;2-B
Abstract
The influence of proximity effects on zero bias conductance (sigma{V = 0}) is investigated in junctions of the type superconductor/normal me tal-constriction-normal metal (S-1/N-1-c-N-2). Such a study is underta ken in some approximations also in the presence of the magnetic field. Zero bias anomalies (ZBA) are determined by the weak coupling nature of the S-1/N-1 interface. Furthermore, the high transmittance of the N -1-c-N-2 interface seems to play a fundamental role in determining the weak dependence of zero bias conductance on the magnetic field, obser ved experimentally in high transmittance microjunctions.