INTERVALLEY NOISE IN A QUANTIZED INVERSION CHANNEL ON A SILICON SURFACE

A theoretical investigation has been made of carrier fluctuation noise in an n-type quantized inversion channel on a (100) Si surface due to phonon-induced intervalley scattering of electrons, We have derived a n equation for the correlation function of fluctuations of one-particl e-state occupation numbers in an arbitrary valley of a conduction band . On its base we have obtained an analytical expression for the spectr al density of intervalley fluctuations in the case of nonelastic elect ron scattering by phonons. It is shown that if the temperature is not too low the main contribution to the intervalley noise is brought in b y electron transitions allowed by the symmetry selection rules in the zero order of the phonon wave vector. We have found that the intervall ey noise spectrum has a Lorentzian form similar to that of the generat ion-recombination noise. Our calculations show that at microwave frequ encies the intervalley noise power can considerably exceed the power o f the thermal noise due to intravalley scattering processes.