BORON ELECTRICAL ACTIVATION IN DUAL B-IMPLANTED SILICON(+N+ AND B++AR+ ION)

Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2 x 10(14) to 1.2 x 10(15) cm( -2). The implanted samples were studied using the Hall effect and stan dard van der Pauw methods. The dependences of the sheet resistivity an d the sheet concentration of charge carriers on the annealing temperat ure in the range from 700 to 1300 K were obtained. Models describing t he influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are propos ed.