Ae. Graham et al., THE GENERATION AND SYNTHETIC APPLICATIONS OF EPISULFONE ALPHA-ANIONS, Journal of the Chemical Society. Perkin transactions. I, (7), 1996, pp. 661-667
Treatment of the episulfone, ,8-dimethyl-2,3-epithio-6,10-dioxaspiro[4
.5]decane S,S-dioxide 1, with lithium diisopropylamide to generate the
corresponding alpha-sulfonyl anion, and anion trapping with trimethyl
silyl chloride or trimethylstannyl chloride in situ, produced the corr
esponding monosilyl, disilyl, monostannyl and distannyl episulfones as
relatively stable, fully characterised crystalline solids. The struct
ure of the disilylated episulfone 3a was also confirmed by X-ray cryst
allography: this is the first reported X-ray structure of a tetrasubst
ituted episulfone and the long carbon-carbon episulfone bond length (1
.686 Angstrom) is particularly noteworthy. With similar procedures the
monotriethylsilyl, monotributylstannyl, and the triethyl, trimethyl d
isilyl adducts were prepared in reasonable to good yields. On treatmen
t with potassium tert-butoxide or thermolysis the functionalized episu
lfones lost sulfur dioxide to produce the corresponding vinyl-silanes
and -stannanes. Attempts to use carbon electrophiles for alpha-sulfony
l anion trapping are also reported. The monobenzoylated adducts 9 and
10 were obtained by in situ trapping with benzoyl chloride. In additio
n, it was found that treatment of the disilylated episulfone 3a with c
aesium fluoride-benzaldehyde gave the monoalkylated adduct 11, albeit
in low yield, Other reactions of the silylated/stannylated episulfones
are also reported.