AES AND XPS DEPTH PROFILE ANALYSIS - A CRITICAL-REVIEW

Authors
Citation
Hj. Mathieu, AES AND XPS DEPTH PROFILE ANALYSIS - A CRITICAL-REVIEW, Le Vide, 52(279), 1996, pp. 81
Citations number
30
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
ISSN journal
12660167
Volume
52
Issue
279
Year of publication
1996
Database
ISI
SICI code
1266-0167(1996)52:279<81:AAXDPA>2.0.ZU;2-C
Abstract
Thin Film chemical compositional profiling is reviewed with emphasis o n Auger Electron Spectroscopy (AES) and X-Ray Photoelectron Spectrosco py (XPS). 4 different zones of a depth profile can be distinguished (1 ) initial zone ((2) 6 nm) before reaching steady state conditions, (2) the steady state within the film, (3) interface between film and subs trate and (4) the substrate. A practical approach is presented to dete rmine quantitative information using elemental sensitivity factors and sputter yields. The limiting parameter is the destructive nature of p rofiling. Optimization of the experimental parameters such as ion beam energy, sample roughness, crystalline orientation and geometrical cra ter edge is necessary for good depth resolution. Ni/Cr multi-layer AES and XPS profiles are presented with and without Zalar rotation.