TEMPERATURE EVOLUTION DURING SCANNING ELECTRON-BEAM PROCESSING OF SILICON

Temperature profile evolutions produced by a scanning electron beam in crystalline silicon have been numerically calculated using a two-dime nsional finite-element scheme. The temperature dependence of the diffe rent silicon properties as well as the electron penetration effects ha ve been taken into account. Numerical calculations carried out at diff erent conditions have been compared with experimental melting-threshol d measurements using an electron beam with a Gaussian power density di stribution. The good agreement between numerical calculations and expe rimental results proves the validity of the two-dimensional approach.