ANNEALING BEHAVIOR OF HIGH-DOSE-IMPLANTED NITROGEN IN INP

Concentration profiles of nitrogen in vacuum-annealed p- and n-type si ngle-crystal (100) InP implanted with 1 x 10(16) 30 keV N-15(+) ions c m(-2) have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the n itrogen implantation was studied by Rutherford Backscattering Spectrom etry (RES) and channeling. Annealing the samples led to loss and redis tribution of nitrogen in the temperature range from 575 to 675 degrees C. At temperatures from 575 to 600 degrees C, rapid migration of nitr ogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas th e p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur ac ting partly as a diffusion barrier. SIMS analyses showed sulphur build -up on the surface in the course of annealing. At temperatures from 60 0 to 675 degrees C, the nitrogen profiles of n- and p-type InP were si milar. A small loss of nitrogen was observed at 625-675 degrees C. Two different recovery stages were observed at 575-600 degrees C and at 6 25-650 degrees C. The corresponding activation energies for nitrogen l oss are 2.9 and 3.0 eV, respectively.