Experiments have been made using surface acoustic waves (SAW) propagat
ing on two GaAs wafers on which a 2- dimensional hole system (2DHS) ha
d been fabricated by MBE. On a GaAs (100) surface we used SAW at a fre
quency of 120 MHz. Amplitude modulation and a lock-in amplifier were u
sed to measure the longitudinal and transverse acousto-electric voltag
es from a Hall-bar structure. Measurements have been made in a magneti
c field up to 5 T and at temperatures between 4.2 and 2 K. A large lon
gitudinal voltage was found which increased linearly with SAW power an
d also increased with applied magnetic field. We have also used a GaAs
(311) wafer and SAW at a frequency of 113 MHz. Using pulse modulation
, measurements have been made of the SAW attenuation and dispersion as
a function of magnetic field up to 13 T and at temperatures below 100
mK. Square wave amplitude modulation and a lock-in amplifier were als
o used to measure the longitudinal and transverse acousto-electric vol
tages from a Hall-bar structure. The acousto-electric signals are comp
ared with theoretical predictions using measured values of the longitu
dinal and transverse resistivity.