RAMAN-SCATTERING OF DISORDERED SIC

Citation
S. Nakashima et al., RAMAN-SCATTERING OF DISORDERED SIC, Physica. B, Condensed matter, 220, 1996, pp. 371-373
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
220
Year of publication
1996
Pages
371 - 373
Database
ISI
SICI code
0921-4526(1996)220:<371:RODS>2.0.ZU;2-E
Abstract
We have measured Raman scattering from SiC crystals containing stackin g disorders. Raman intensity profiles are calculated for models of dis ordered structures and compared with the observed spectra.