1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH DOUBLE-BONDED GAAS-ALAS BRAGG MIRRORS

We demonstrate, for the first time, double-bonded AlGaInAs strain-comp ensated quantum-well 1.3-mu m vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-w ell active layers sandwiched by two InP layers, The lasers have operat ed under pulsed conditions at room temperature, A record low pulsed th reshold current density of 4.2 kA/cm(2) and a highest maximum light ou tput power greater than 4.6 mW have been achieved, The maximum thresho ld current characteristic temperature T-0 of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-mu m VCSEL's.