LOW-THRESHOLD AND HIGH-TEMPERATURE OPERATION OF INGAALAS-INP LASERS

Authors
CHEN TR CHEN PC UNGAR J NEWKIRK MA OH S BARCHAIM N
Citation
Tr. Chen et al., LOW-THRESHOLD AND HIGH-TEMPERATURE OPERATION OF INGAALAS-INP LASERS, IEEE photonics technology letters, 9(1), 1997, pp. 17-18
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
1
Year of publication
1997
Pages
17 - 18
Database
ISI
SICI code
1041-1135(1997)9:1<17:LAHOOI>2.0.ZU;2-F
Abstract
InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes o perating at 1300 nm and exhibiting excellent performance have been fab ricated. Threshold currents as low as 3.9 mA and T-0 values as high as 120 K have been measured, These values are the best reported thus far for this material system.