30-GHZ BANDWIDTH 1.55-MU-M STRAIN-COMPENSATED INGAALAS-INGAASP MQW LASER

High-speed 1.55 mu m laser diodes with a 3-dB modulation bandwidths of 30 GHz were fabricated by using short-cavity mushroom structures with undoped, strain-compensated InGaAlAs-InGaAsP twenty-quantum-well acti ve regions, The bandwidths were achieved at low bias current of 100 mA , The laser exhibited a high differential gain of 1.54 x 10(-15) cm(2) and a small K factor of 0.135 ns, These results were achieved by usin g an In0.386Ga0.465AlAs barrier with 0.83% tensile strain to reduce th e thermal emission time of holes from wells and hence the hole transpo rt time.