EXCITATION SPECTROSCOPY OF ANODICALLY OXIDIZED POROUS SILICON

Citation
Vv. Filippov et al., EXCITATION SPECTROSCOPY OF ANODICALLY OXIDIZED POROUS SILICON, Journal of luminescence, 69(2), 1996, pp. 115-119
Citations number
28
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
69
Issue
2
Year of publication
1996
Pages
115 - 119
Database
ISI
SICI code
0022-2313(1996)69:2<115:ESOAOP>2.0.ZU;2-V
Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) studies are carried out on porous silicon (PS) layers anodically oxidized in N H4NO3-ethylenglycol electrolyte. PLE spectra reveal monocrystalline si licon like features after removing the oxide shelf of crystallites by chemical etching. Its reconstruction during oxidation in air atmospher e seems to increase mechanical stresses in silicon nanocrystallites. A s a result, the PLE spectra, absorption and emission properties of PS are changed considerably.