A HIGH-EFFICIENCY 94-GHZ 0.15-MU-M INGAAS INALAS/INP MONOLITHIC POWERHEMT AMPLIFIER/

We report high efficiency W-band power monolithic microwave integrated circuits (MMIC's) using passivated 0.15 mu m gate length In0.53Ga0.47 As/In0.52Al0.48As/InP HEMT's. A 0.15 mu m x 320 mu m single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficienc y of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power add ed efficiency was achieved at 94 GHz, These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.