EFFECT OF SPATIAL-DISPERSION OF THE DIELECTRIC ON THE BINDING-ENERGY OF D- ION IN SI AND GE

Using a multivalley effective mass theory, we obtain the binding energ y of a D- ion in Si and Ge taking into account the spatial variation o f the host dielectric function. We find that on comparison with experi mental results the effect of spatial dispersion is important in the es timation of binding energy for the D- formed by As in Si and Ge. The e ffect is less significant for the case of D- formed by P and Sb donors .