A POWER IC TECHNOLOGY WITH EXCELLENT CROSS-TALK ISOLATION

This paper reports a low-cost, excellent cross-talk isolation power in tegrated circuit (PIC) technology capable of integrating high-voltage LDR MOS, high-voltage LIGBT, and low-voltage CMOS control circuit. The technology is implemented using a conventional twin-well CMOS process with no compromise on the CMOS devices, and the breakdown voltages of the LDMOS and LIGBT with drift length of 40 mu m are over 400 V. Usin g this technology, operating current of the body diode of the LDMOS ca n be improved by over 16 times and operating current of the LIGBT can be improved by over five times before CMOS Latch-up in the control cir cuit occurs.