INP-BASED SELF-ALIGNED NORMALLY-OFF SUPERLATTICE-INSULATED-GATE FIELD-EFFECT TRANSISTOR

An InP-based normally-off superlattice-insulated-gate field-effect tra nsistor (SIGFET) is developed using a self-aligned implant profess. Th e new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 mu m gate length delivers more t han 800 mA/mm of drain current at 2 V of forward gate bias and yields an f(T) as high as 42 GHz. An explanation for a new kink effect is als o proposed.